Wet station_Acid#1 | 습식세정장치_산#1
Laboratory/Field | |||
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Model | Wet station | ||
Maker | Donghoon tech | ||
Technician | Song-Hee Lee | ||
Contact | 052-217-4190 / lychle2@unist.ac.kr | ||
Status for Reservation | 가능 | ||
Reservation Unit | 30min | Maximum Time (per day) | 3hr |
Open(~ago) | 2주전 | Cancel (~ago) | 2hr |
Equipment location | 108동 B101호 (Bldg. 108, Room B101) |
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Description
습식 세정 공정 (산성 용액)
불산, 황산/과수 용액을 사용
최대 6인치 웨이퍼 공정이 가능함 (가열가능)Wet cleaning and etching process by Acidic chemical (DHF,BOE,SPM)
Max. 6inch loaded in process bath with heating. -
Specifications
• Chemical supply : manual
• Chemical temp. : 50 ~ 120
• Chemical drain : bottle drain (air valve)
• PR wet station (2 Set) : ultrasonic bath, develop bath, Q.D.R bath
• Acid wet station : SC-1, 2 bath, SPM bath, BOE bath, DHF bath, H3PO4 bath, Q.D.R bath
• Solvent wet station
• Etching wet station
• MEMS wet station
• CMOS wet station
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Applications
• Photoresist developing
• Surface cleaning
• Wet etching (Si wafer/SiO2 layer etc. )