TEOS LPCVD | 테오스 저압화학기상증착기
| Laboratory/Field | |||
|---|---|---|---|
| Model | VULCAN-V61RL | ||
| Maker | LEAD Engineering | ||
| Technician | Hae-ra Kang | ||
| Contact | 052-217-4167 / haera@unist.ac.kr | ||
| Status for Reservation | 가능 | ||
| Reservation Unit | 4hr | Maximum Time (per day) | 8hr |
| Open(~ago) | 2주전 | Cancel (~ago) | 2hr |
| Equipment location | 108동 B101호 (Bldg. 108, Room B101) | ||
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Description
Vertical type의 독립된 챔버로 TEOS gas를 열분해하여 기판 상에 확산, Si Substrate 격자구조를 변형 시키지 않고 SiO2 증착이 가능하고 굴곡이 있는 패턴에서는 Conformal 할 수 있음. 낮은 Dielectric constant SiO2 박막 형성이 가능함.
It is possible to thermally decompose TEOS gas into a vertical type independent chamber and diffuse it on the substrate, and SiO2 deposition is possible without deforming the Si Substrate lattice structure, and it can be deposition conformally.
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Specifications
• Vertical furnace type
• Wafer size : 6 inch silicon wafer
• Process gas : TEOS
• Process temp : 600 ~ 700 °C
• Thickness uniformity : less than ± 3 % within wafer, wafer to wafer
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Applications