Equipment

PE CVD_#3 (TTL) | 플라즈마 화학기상 증착기 Ⅲ

보유장비 관련 정보
Laboratory/Field
Model FABStar+
Maker TTL
Technician Hae-ra Kang
Contact 052-217-4167 / haera@unist.ac.kr
Status for Reservation 가능
Reservation Unit 2hr Maximum Time (per day) 3hr
Open(~ago) 2주전 Cancel (~ago) 1hr
  • Description

    PECVD System is capable of deposition silicon nitride and silicon carbide using electron energy (plasma) as the activation method to enable deposition at a low temperature and at a reasonable rate.

  • Specifications

    • Wafer Size : piece ~ 6 inch silicon wafer

    Substrate temperature : ~ 350 °C

    • High plasma density, high dep. rate PE-CVD

    • Process gas : N2, He, SF6 /O2, pure SiH4 /NH3 /CH4

    • Power supply : 600 W, 13.56 MHz RF Generator

    • Process guarantee : 1000 Å ~ 1 um

    • Uniformity : less than ± 3 % within wafer

    • Uniform process gas flow distribution

  • Applications

    • High rate and high quality silicon carbide deposition with stress control

    • Passivation layer

    • Inter metal dielectric of semiconductor

    • Inter layer dielectric of semiconductor