Equipment

RF Sputter | 고주파 스퍼터링 시스템

보유장비 관련 정보
Laboratory/Field
Model SRN-120
Maker SORONA
Technician Hyung-il Kim
Contact 052-217-4065 / hikim78@unist.ac.kr
Status for Reservation 가능
Reservation Unit 1hr Maximum Time (per day) 2hr
Open(~ago) 2주전 Cancel (~ago) 2hr
  • Description

    RF Sputtering system is a multi-purpose tool generating plasma inside chamber supplying 13.56 Mhz RF power to cathode and capable of thin film deposition of insulator on wafer by sputtering an insulator target by self bias voltage.

  • Specifications

    • Substrate size : 4, 6 inch wafer

    • Substrate rotation speed : 0 ~ 60 rpm

    • RF pre-cleaning : 300 W, automatic processing

    • Substrate heating : 400 °C ± 3 % (wafer temp)

    • Target : ITO, ZnO, SiO2, Al2O3, TiO2

    • Power source : 13.56 Mhz RF power

    • Uniformity : less than ± 5 % within wafer

  • Applications

    • Thin film for semiconductor

    • Insulation layer deposition