PE CVD_#2 (SORONA) | 플라즈마 화학기상 증착기 Ⅱ
| Laboratory/Field | |||
|---|---|---|---|
| Model | PEH-600 | ||
| Maker | SORONA | ||
| Technician | Hae-ra Kang | ||
| Contact | 052-217-4167 / haera@unist.ac.kr | ||
| Status for Reservation | 가능 | ||
| Reservation Unit | 1hr | Maximum Time (per day) | 3hr |
| Open(~ago) | 2주전 | Cancel (~ago) | 2hr |
| Equipment location | 108동 B101호 (Bldg. 108, Room B101) | ||
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Description
PECVD System is a multipurpose tool capable of deposition silicon oxide, silicon nitride using electron energy (plasma) as the activation method to enable deposition at a low temperature and at a reasonable rate.
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Specifications
• Wafer Size : 4 ~ 6 inch silicon wafer
Max Substrate Temperature : 400 °C
• High Plasma Density, High Dep. rate PE-CVD
• Power Supply : 600 W, 13.56 MHz RF Generator
• Process guarantee : 1000 Å ~ 2 um
• Uniformity : less than ± 3 % within wafer
• Wafer to Wafer Uniformity : ± 3 %
• Uniform process gas flow distribution
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Applications
• Passivation layer of semiconductor
• Inter metal dielectric of semiconductor
• Inter layer dielectric of semiconductor