Equipment

PE CVD_#1 (SORONA) | 플라즈마 화학기상 증착기 Ⅰ

보유장비 관련 정보
Laboratory/Field
Model PEH-600
Maker SORONA
Technician Hae-ra Kang
Contact 052-217-4167 / haera@unist.ac.kr
Status for Reservation 가능
Reservation Unit 2hr Maximum Time (per day) 3hr
Open(~ago) 2주전 Cancel (~ago) 2hr
  • Description

    PECVD System is a multipurpose tool capable of deposition silicon oxide, silicon nitride using electron energy (plasma) as the activation method to enable deposition at a low temperature and at a reasonable rate.

  • Specifications

    • Wafer Size : 4 ~ 6 inch silicon wafer

    Max Substrate Temperature : 400 °C

    • High Plasma Density, High Dep. rate PE-CVD

    • Power Supply : 600 W, 13.56 MHz RF Generator

    • Process guarantee : 1000 Å ~ 2 um

    • Uniformity : less than ± 3 % within wafer

    • Wafer to Wafer Uniformity : ± 3 %

    • Uniform process gas flow distribution

  • Applications

    • Passivation layer of semiconductor

    • Inter metal dielectric of semiconductor

    • Inter layer dielectric of semiconductor