NX2000 FIB | 집속이온빔 FIB
| Laboratory/Field | |||
|---|---|---|---|
| Model | NX2000 | ||
| Maker | Hitachi | ||
| Technician | Sun-yi Lee | ||
| Contact | 052-217-4023 / ssun295@unist.ac.kr | ||
| Status for Reservation | 불가능 | ||
| Reservation Unit | Maximum Time (per day) | ||
| Open(~ago) | Cancel (~ago) | ||
| Equipment location | Bldg.102, Room B115 | ||
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Description
FIB-SEM systems have become an indispensable tool for characterization and analysis of the latest technologies and high performance nano-scale materials. An ever-increasing demand for ultrathin TEM lamellas without artifacts during FIB processing require the best in ion and electron optics technologies.
Hitachi's NX2000 high performance FIB and high resolution SEM system with its unique sample orientation control* and triple beam* technologies, supports high throughput, and high quality TEM sample preparation for cutting edge applications. -
Specifications
FIB column
• Resolution : 4 nm @ 30 kV, 60 nm @ 2 kV
• Acceleration voltage : 0.5 ~ 30 kV
FE-SEM column
• Resolution : 4 nm @ 30 kV, 60 nm @ 2 kV
• Acceleration voltage : 0.5 ~ 30 kV
• electron source : Cold cathode field emission source
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Applications
• Ultra high resolution electron, ion imaging
• TEM sample preparation
• High-quality lamella preparation with in-situ Ar ion milling