Metal ICP-RIE | 유도결합 플라즈마 금속 건식 식각기
Laboratory/Field | |||
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Model | FABStar | ||
Maker | TTL | ||
Technician | Song-Hee Lee | ||
Contact | 052-217-4190 / lychle2@unist.ac.kr | ||
Status for Reservation | 가능 | ||
Reservation Unit | 1Hr | Maximum Time (per day) | 3Hr |
Open(~ago) | 14Days | Cancel (~ago) | 2Hr전 |
Equipment location | 108동 B101호 (Bldg. 108, Room B101) |
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Description
유도결합 플라즈마와 가스를 이용하여 Al, Ti, Cr, Au, Al2O3와 같은 재료를 식각하기 위해서 설계된 장치이다.
This eqipment is designed for etching metals like Al, Ti, Cr, Au and Al2O3, ITO.
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Specifications
-Process gas : CF4, SF6, Cl2, BCl3, HBr, Ar, O2, N2
-Sample : Standard 150 mm (6 inch)
• Al etch
-Etch rate > 2000 Å/min
-Selectivity (PR) > 2:1
-Uniformity > 95% (150mm)
-Profile angle > 90 ± 5 degree
• Cr
-Etch rate <300 Å/min
-Selectivity (PR) <0.5:1
-Uniformity >95% (150mm)
-Profile angle > 90 ± 5 degree
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Applications
Al, Ti, Cr, Au, Al2O3, ITO
(Except Cu, Ni)