Equipment

LP CVD | 저압 화학기상 박막 증착기

보유장비 관련 정보
Laboratory/Field
Model KVL-206
Maker KSM
Technician Hae-ra Kang
Contact 052-217-4190 / seok199407@unist.ac.kr
Status for Reservation 가능
Reservation Unit 6hr Maximum Time (per day) 8hr
Open(~ago) 2주전 Cancel (~ago) 2hr
Equipment location 108동 B101호 (Bldg. 108, Room B101)
  • Description

    LPCVD refers to a thermal process used to deposit thin films from gasphase precursors at subatmospheric pressures. LPCVD is used to deposit a wide range of possible film compositions with good conformal step coverage.

  • Specifications

    • Wafer size : 6 inch silicon wafer

    • Vertical furnace type

    • D-Poly

    - process gas : SiH4, PH3

    - process temp : 500 ~ 600 °C

    - thickness uniformity : less than ± 3 % within wafer

    - Rs uniformity : less than ± 3 % wafer to wafer

    less than ± 5 % within wafer

    • Nitride

    - process gas : DCS, NH3,

    - process temp : 700 ~ 800 °C

    - thickness uniformity : less than ± 3 % within wafer

    less than ± 3 % wafer to wafer

  • Applications

    • Nitride, Poly-Si layer deposition

    • Impurity doping for solar cell

    • Research of semiconductor, MEMS process