Equipment

Furnace_DRY | 불순물 주입 확산로

보유장비 관련 정보
Laboratory/Field
Model KHD-306
Maker KSM
Technician Hae-ra Kang
Contact 052-217-4167 / haera@unist.ac.kr
Status for Reservation 가능
Reservation Unit 8hr Maximum Time (per day) 8hr
Open(~ago) 2주전 Cancel (~ago) 2hr
  • Description

    Silicon dioxide (SiO2) is a main insulating material used in micro technology and the most common technique in a furnace. There are two methods of oxidation. (Dry and wet)

  • Specifications

    • Wafer size : 4 ~ 6 inch sillicon vapor

    • Wet oxidation chamber

    - thickness uniformity : less than ± 3 % within wafer less than ± 3 % wafer to wafer

    • Dry oxidation chamber

    - thickness uniformity : less than ± 3 % within wafer less than ± 3 % wafer to wafer

    • Metal & dielectric film annealing chamber

    • POCl3 doping chamber

    - resistivity uniformity : less than ± 5 % within wafer

  • Applications

    • Oxidation layer growth on silicon wafer

    • Metal & dielectric layer annealing process

    • N-type doping and anneal process