Furnace_DRY | 열처리 확산로
| Laboratory/Field | |||
|---|---|---|---|
| Model | KHD-306 | ||
| Maker | KSM | ||
| Technician | Hae-ra Kang | ||
| Contact | 052-217-4167 / haera@unist.ac.kr | ||
| Status for Reservation | 가능 | ||
| Reservation Unit | 8hr | Maximum Time (per day) | 8hr |
| Open(~ago) | 2주전 | Cancel (~ago) | 2hr |
| Equipment location | 108동 B101호 (Bldg. 108, Room B101) | ||
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Description
Silicon dioxide (SiO2) is a main insulating material used in micro technology and the most common technique in a furnace. There are two methods of oxidation. (Dry and wet)
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Specifications
• Wafer size : 4 ~ 6 inch Si
• Wet oxidation chamber
- thickness uniformity : less than ± 3 % within wafer less than ± 3 % wafer to wafer
• Dry oxidation chamber
- thickness uniformity : less than ± 3 % within wafer less than ± 3 % wafer to wafer
• Metal & dielectric film annealing chamber
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Applications
• Oxidation layer growth on silicon wafer
• Metal & dielectric layer annealing process