Equipment

Dielectric ICP-RIE | 유도결합 플라즈마 산화막 건식 식각기

보유장비 관련 정보
Laboratory/Field
Model FABstar
Maker TTL
Technician Kang O Kim
Contact 052-217-4182 / ko8809@unist.ac.kr
Status for Reservation 가능
Reservation Unit 1Hr Maximum Time (per day) 3Hr
Open(~ago) 15Days Cancel (~ago) 1Hr
  • Description

    유도결합 플라즈마와 가스를 이용하여 SiO2, Si3N4, Si과 같은 절연재료를 식각하기 위해서 설계된 장치이다.

    This eqipment is designed for etching dielectric materials like SiO2, Si3N4 and Si.

  • Specifications

    -Process gas : CF4, CHF3, SF6, Cl2, BCl3, Ar, O2, N2

    -Sample : Standard 150 mm (6 inch)

    • SiO2 etch

    -Etch rate > 2500 Å/min

    -Selectivity (PR) > 1.5:1

    -Uniformity > 97% (150mm)

    -Profile angle > 90 ± 5 degree

    • Si3N4

    -Etch rate >1500 Å/min

    -Selectivity (PR) >1.5:1

    -Uniformity >97% (150mm)

    -Profile angle > 90 ± 5 degree

  • Applications

    SiO2, Si3N4, Si, Polymer etch