Deep Si Etcher | 깊은준위 건식식각 장치
| Laboratory/Field | |||
|---|---|---|---|
| Model | Tegal 200 | ||
| Maker | Tegal France | ||
| Technician | Kang O Kim | ||
| Contact | 052-217-4182 / ko8809@unist.ac.kr | ||
| Status for Reservation | 가능 | ||
| Reservation Unit | 2hr | Maximum Time (per day) | 2hr |
| Open(~ago) | 2주전 | Cancel (~ago) | 2hr |
| Equipment location | 108동 B101호 (Bldg. 108, Room B101) | ||
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Description
Micro electro mechanical systems (MEMS) fabrication, deep reactive ion etching (DRIE) is one of the most characteristic widely utilized techniques.
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Specifications
• Source generator : 5500 W
• Chuck generator : 300 W
• E-chuck hellium cooling system
• SF6 / C4F8 / O2 bosch process
• Deep silicon etching
• Loadlock / process chamber transfer
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Applications
• Deep etching process of Si / SiO2 / Si3N4
• 100um 이상 식각 외부 의뢰는 받지 않습니다.