Equipment

Atomic Layer Deposition | 원자층 증착 장비

보유장비 관련 정보
Laboratory/Field
Model Lucida D100
Maker NCD
Technician Hae-ra Kang
Contact 052-217-4167 / haera@unist.ac.kr
Status for Reservation 가능
Reservation Unit 3hr Maximum Time (per day) 5hr
Open(~ago) 2주전 Cancel (~ago) 2hr
  • Description

    ALD is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. The majority of ALD reactions use two chemicals, typically called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. Through the repeated exposure to separate precursors, a thin film is slowly deposited.

  • Specifications

    • Substrate size : 4 ~ 8 inch silicon wafer

    • Substrate temperature

    - 25 °C ~ 350 °C (± 0.2 °C) @1 Torr, in wafer

    • Deposition uniformity : less than ± 2 % within wafer

    • Precursor sources

    - 3, heated 2 sources and H2O source •Substrate size : 4 ~ 8 inch silicon wafer

    • Process temperature : 30 °C ~ 450 °C

    • Deposition uniformity : less than ± 2 % within wafer

    • Dual process mode : termal and plasma

    • Shower head type multi-chamber cluster tool

  • Applications

    • High-k thin film (HfO2, TiO2, Al2O3) Depo.

    • Applications of R&D

    • Dielectric thin films : Al2O3, HfO2, etc

    • Nitride & metal thin films : TaN, etc