Hitachi NX2000 FIB | 이온집속빔
| Laboratory/Field | |||
|---|---|---|---|
| Model | NX2000 | ||
| Maker | Hitachi | ||
| Technician | Min-jae Kim | ||
| Contact | 052-217-4064 / mjkim@unist.ac.kr | ||
| Status for Reservation | 가능 | ||
| Reservation Unit | 2 | Maximum Time (per day) | 6 |
| Open(~ago) | 14 | Cancel (~ago) | 2 |
| Equipment location | 108동 102호 | ||
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Description
분해능 4 nm @ 30 kV, 60 nm @ 2 kV
가속전압 0.5~30 kV
빔 전류 0.05 pA ~ 100 nA
Stage X: 0 ~ 205 mm
Y: 0 ~ 205 mm
Z: 0 ~ 10 mm
R: 0 ~ 360° Endless
T: -5 ~ 60°Resolution 4 nm @ 30 kV, 60 nm @ 2 kV
Accelerating voltage 0.5~30 kV
Beam current 0.05 pA ~ 100 nA
Stage X: 0 ~ 205 mm
Y: 0 ~ 205 mm
Z: 0 ~ 10 mm
R: 0 ~ 360° Endless
T: -5 ~ 60° -
Specifications
Resolution 4 nm @ 30 kV, 60 nm @ 2 kV
Accelerating voltage 0.5~30 kV
Beam current 0.05 pA ~ 100 nA
Stage X: 0 ~ 205 mm
Y: 0 ~ 205 mm
Z: 0 ~ 10 mm
R: 0 ~ 360° Endless
T: -5 ~ 60°
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Applications