Dielectric ICP-RIE | 유도결합 플라즈마 산화막 건식 식각기
| Laboratory/Field | |||
|---|---|---|---|
| Model | FABstar | ||
| Maker | TTL | ||
| Technician | Hee-Song Hong | ||
| Contact | 052-217-4194 / armada@unist.ac.kr | ||
| Status for Reservation | 가능 | ||
| Reservation Unit | 1Hr | Maximum Time (per day) | 3Hr |
| Open(~ago) | 15Days | Cancel (~ago) | 2Hr |
| Equipment location | 108동 B101호 (Bldg. 108, Room B101) | ||
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Description
유도결합 플라즈마와 가스를 이용하여 SiO2, Si3N4, Si과 같은 절연재료를 식각하기 위해서 설계된 장치이다.
This eqipment is designed for etching dielectric materials like SiO2, Si3N4 and Si.
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Specifications
-Process gas : CF4, CHF3, SF6, Cl2, BCl3, Ar, O2, N2
-Sample : Standard 150 mm (6 inch)
• SiO2 etch
-Etch rate > 2500 Å/min
-Selectivity (PR) > 1.5:1
-Uniformity > 97% (150mm)
-Profile angle > 90 ± 5 degree
• Si3N4
-Etch rate >1500 Å/min
-Selectivity (PR) >1.5:1
-Uniformity >97% (150mm)
-Profile angle > 90 ± 5 degree
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Applications
SiO2, Si3N4, Si, Polymer etch