LP CVD | 저압 화학기상 박막 증착기
| Laboratory/Field | |||
|---|---|---|---|
| Model | KVL-206 | ||
| Maker | KSM | ||
| Technician | Hae-ra Kang | ||
| Contact | 052-217-4167 / haera@unist.ac.kr | ||
| Status for Reservation | 가능 | ||
| Reservation Unit | 6hr | Maximum Time (per day) | 8hr |
| Open(~ago) | 2주전 | Cancel (~ago) | 2hr |
| Equipment location | 108동 B101호 (Bldg. 108, Room B101) | ||
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Description
LPCVD refers to a thermal process used to deposit thin films from gasphase precursors at subatmospheric pressures. LPCVD is used to deposit a wide range of possible film compositions with good conformal step coverage.
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Specifications
• Wafer size : 6 inch silicon wafer
• Vertical furnace type
• Doped-Poly Si
- process gas : SiH4, PH3
- process temp : 530 ~ 580 °C
- thickness uniformity : less than ± 3 % within wafer
- Rs uniformity : less than ± 3 % wafer to wafer
less than ± 5 % within wafer
• Nitride
- process gas : DCS, NH3,
- process temp : 785 °C
- thickness uniformity : less than ± 3 % within wafer
less than ± 3 % wafer to wafer
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Applications
• Nitride, Doped Poly-Si layer deposition
• Impurity doping for solar cell
• Research of semiconductor, MEMS process