PE CVD_#3 (TTL) | 플라즈마 화학기상 증착기 Ⅲ
| Laboratory/Field | |||
|---|---|---|---|
| Model | FABStar+ | ||
| Maker | TTL | ||
| Technician | Hae-ra Kang | ||
| Contact | 052-217-4167 / haera@unist.ac.kr | ||
| Status for Reservation | 가능 | ||
| Reservation Unit | 2hr | Maximum Time (per day) | 3hr |
| Open(~ago) | 2주전 | Cancel (~ago) | 1hr |
| Equipment location | 108동 B101호 (Bldg. 108, Room B101) | ||
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Description
PECVD System is capable of deposition silicon nitride and silicon carbide using electron energy (plasma) as the activation method to enable deposition at a low temperature and at a reasonable rate.
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Specifications
• Wafer Size : piece ~ 6 inch silicon wafer
Substrate temperature : ~ 350 °C
• High plasma density, high dep. rate PE-CVD
• Process gas : N2, He, SF6 /O2, pure SiH4 /NH3 /CH4
• Power supply : 600 W, 13.56 MHz RF Generator
• Process guarantee : 1000 Å ~ 1 um
• Uniformity : less than ± 3 % within wafer
• Uniform process gas flow distribution
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Applications
• High rate and high quality silicon carbide deposition with stress control
• Passivation layer
• Inter metal dielectric of semiconductor
• Inter layer dielectric of semiconductor