RF Sputter | 고주파 스퍼터링 시스템
| Laboratory/Field | |||
|---|---|---|---|
| Model | SRN-120 | ||
| Maker | SORONA | ||
| Technician | Hyung-il Kim | ||
| Contact | 052-217-4065 / hikim78@unist.ac.kr | ||
| Status for Reservation | 가능 | ||
| Reservation Unit | 1hr | Maximum Time (per day) | 2hr |
| Open(~ago) | 2주전 | Cancel (~ago) | 2hr |
| Equipment location | 108동 B101호(Bldg, 108, Room B101) | ||
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Description
RF Sputtering system is a multi-purpose tool generating plasma inside chamber supplying 13.56 Mhz RF power to cathode and capable of thin film deposition of insulator on wafer by sputtering an insulator target by self bias voltage.
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Specifications
• Substrate size : 4, 6 inch wafer
• Substrate rotation speed : 0 ~ 60 rpm
• RF pre-cleaning : 300 W, automatic processing
• Substrate heating : 400 °C ± 3 % (wafer temp)
• Target : ITO, ZnO, SiO2, Al2O3, TiO2
• Power source : 13.56 Mhz RF power
• Uniformity : less than ± 5 % within wafer
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Applications
• Thin film for semiconductor
• Insulation layer deposition