SiC PE CVD
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Description
SiC PECVD System is capable of deposition silicon carbide using electron energy (plasma) as the activation method to enable deposition at a low temperature and at a reasonable rate.
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Specifications
• Wafer Size : 4 ~ 6 inch silicon wafer
Substrate temperature : 250 ~ 350 °C
• High plasma density, high dep. rate PE-CVD
• Process gas : N2, SF6 /O2, pure SiH4 /CH4
• Power supply : 600 W, 13.56 MHz RF Generator
• Process guarantee : 1000 Å ~ 1 um
• Uniformity : less than ± 3 % within wafer
• Uniform process gas flow distribution
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Applications
• High rate and high quality silicon carbide deposition with stress control
• Passivation layer
• Inter metal dielectric of semiconductor
• Inter layer dielectric of semiconductor