Furnace_POCl3
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Description
Silicon dioxide (SiO2) is a main insulating material used in micro technology and the most common technique in a furnace. There are two methods of oxidation. (Dry and wet)
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Specifications
• Wafer size : 4 ~ 6 inch sillicon vapor
• Wet oxidation chamber
- thickness uniformity : less than ± 3 % within wafer less than ± 3 % wafer to wafer
• Dry oxidation chamber
- thickness uniformity : less than ± 3 % within wafer less than ± 3 % wafer to wafer
• Metal & dielectric film annealing chamber
• POCl3 doping chamber
- resistivity uniformity : less than ± 5 % within wafer
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Applications
• Oxidation layer growth on silicon wafer
• Metal & dielectric layer annealing process
• N-type doping and anneal process