Ellipsometer
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Description
Ellipsometry is an optical technique for investigating the dielectric properties of thin films. Ellipsometry can be used to characterize composition, roughness, thickness (depth), crystalline nature, doping concentration, electrical conductivity and other material properties. It is very sensitive to the change in the optical response of incident radiation that interacts with the material being investigated
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Specifications
• Wavelength range : 240 nm ~ 1000 nm (CCD Type)
• Beam spot size : ≥ 1.5 mm
• Measuring constants Film thickness, n, k vs λ
• Thickness range : sub A ~ 10 μm (depends on film type)
• Number of layers Up to 10 layers (depends on film type)
• Throughput 1 10~15sec. per point (depends on film type)
• Repeatability2 (3σ) ± 0.3 A on 10 times measurement
• 2D, 3D Mapping Data Display
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Applications
• Semiconductor : Poly-Si, GaAs, GaN, ZnS, SiGe, ONO, SOI, SiLk
• Dielectric material : SiO2, Si3N4, ITO, TiO2, ZrO2, BTS, HfO2
• Polymer : PVA, PET, PP, PR