보유장비

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Furnace_WET
보유장비 관련 정보
연구실/분야
모델명 KHD-306
제조사 KSM
담당자 강해라
연락처 052-217-4167 / haera@unist.ac.kr
예약 가능여부 가능
예약단위 8hr 1일최대예약시간 8hr
예약Open(~일 전) 2주전 예약취소불가(~일 전) 2hr
장비위치 108동 B101호 (Bldg. 108, Room B101)
  • Description

    Silicon dioxide (SiO2) is a main insulating material used in micro technology and the most common technique in a furnace. There are two methods of oxidation. (Dry and wet)

  • Specifications

    • Wafer size : 4 ~ 6 inch sillicon vapor

    • Wet oxidation chamber

    - thickness uniformity : less than ± 3 % within wafer less than ± 3 % wafer to wafer

    • Dry oxidation chamber

    - thickness uniformity : less than ± 3 % within wafer less than ± 3 % wafer to wafer

    • Metal & dielectric film annealing chamber

    • POCl3 doping chamber

    - resistivity uniformity : less than ± 5 % within wafer

  • Applications

    • Oxidation layer growth on silicon wafer

    • Metal & dielectric layer annealing process

    • N-type doping and anneal process