E-beam lithography | 전자선 노광장치 시스템(JEOL) | 전자선 노광장치 시스템(JEOL)
| 연구실/분야 | |||
|---|---|---|---|
| 모델명 | JBX-8100FS | ||
| 제조사 | JEOL | ||
| 담당자 | 이루다 | ||
| 연락처 | 052-217-4022 / luda30159@unist.ac.kr | ||
| 예약 가능여부 | 가능 | ||
| 예약단위 | 1hr | 1일최대예약시간 | 6hr |
| 예약Open(~일 전) | 14days | 예약취소불가(~일 전) | 2hr |
| 장비위치 | Room B101, Building 108(UNFC) | ||
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Description
나노미터급 초정밀 패턴을 기판에 직접 형성하는 장비로, 전자빔을 주사해 감광재에 미세 패턴을 그린 후 식각이나 증착 공정과 결합해 반도체, 광소자, MEMS, 나노구조물 제작에 활용
A system that directly creates nanometer-scale precision patterns on substrates by scanning an electron beam to draw fine patterns on photoresist, which are then combined with etching or deposition processes for the fabrication of semiconductors, photonic devices, MEMS, and nanostructures.
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Specifications
Beam current, Voltage : 5pA ~200nA, 100keV
Field stitching accuracy : ±9nm (@100um), ±20nm (@1mm)
Overlay accuracy : ±9nm (@100um), ±20nm (@1mm)
Position accuracy within filed : ±9nm (@100um), ±20nm (@1mm)
Position accuracy within substrate : ±50nm (60mm□)
Minimum beam diameter : 1.8nm(HR), 5.1nm (HT)
Minimum line width : ≦ 8nm (HR), ≦ 12nm(HT)
Beam current stability : 0.2%p-p /h (@2nA, HT)
Writing area : 175mm x 170mm (piece~6Inch writing)
Maximum writing speed _Scan : 125MHz
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Applications
Fabrication of semiconductor masks and novel devices
Production of photonic devices such as waveguides and photonic crystals
Manufacturing of MEMS/NEMS components and sensors
Patterning of nanostructures and metamaterials