LP CVD | 저압 화학기상 박막 증착기
| 연구실/분야 | |||
|---|---|---|---|
| 모델명 | KVL-206 | ||
| 제조사 | KSM | ||
| 담당자 | 강해라 | ||
| 연락처 | 052-217-4167 / haera@unist.ac.kr | ||
| 예약 가능여부 | 가능 | ||
| 예약단위 | 6hr | 1일최대예약시간 | 8hr |
| 예약Open(~일 전) | 2주전 | 예약취소불가(~일 전) | 2hr |
| 장비위치 | 108동 B101호 (Bldg. 108, Room B101) | ||
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Description
LPCVD refers to a thermal process used to deposit thin films from gasphase precursors at subatmospheric pressures. LPCVD is used to deposit a wide range of possible film compositions with good conformal step coverage.
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Specifications
• Wafer size : 6 inch silicon wafer
• Vertical furnace type
• Doped-Poly Si
- process gas : SiH4, PH3
- process temp : 530 ~ 580 °C
- thickness uniformity : less than ± 3 % within wafer
- Rs uniformity : less than ± 3 % wafer to wafer
less than ± 5 % within wafer
• Nitride
- process gas : DCS, NH3,
- process temp : 785 °C
- thickness uniformity : less than ± 3 % within wafer
less than ± 3 % wafer to wafer
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Applications
• Nitride, Doped Poly-Si layer deposition
• Impurity doping for solar cell
• Research of semiconductor, MEMS process