Atomic Layer Deposition | 원자층 증착 장비
| 연구실/분야 | |||
|---|---|---|---|
| 모델명 | Lucida D100 | ||
| 제조사 | NCD | ||
| 담당자 | 김보성 | ||
| 연락처 | 052-217-4191 / mbosing@unist.ac.kr | ||
| 예약 가능여부 | 가능 | ||
| 예약단위 | 3hr | 1일최대예약시간 | 5hr |
| 예약Open(~일 전) | 2주전 | 예약취소불가(~일 전) | 2hr |
| 장비위치 | 108동 B101호 (Bldg. 108, Room B101) | ||
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Description
ALD is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. The majority of ALD reactions use two chemicals, typically called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. Through the repeated exposure to separate precursors, a thin film is slowly deposited.
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Specifications
• Substrate size : 4 ~ 8 inch silicon wafer
• Substrate temperature
- 25 °C ~ 350 °C (± 0.2 °C) @1 Torr, in wafer
• Deposition uniformity : less than ± 2 % within wafer
• Precursor sources
- 3, heated 2 sources and H2O source •Substrate size : 4 ~ 8 inch silicon wafer
• Process temperature : 30 °C ~ 450 °C
• Deposition uniformity : less than ± 2 % within wafer
• Dual process mode : termal and plasma
• Shower head type multi-chamber cluster tool
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Applications
• High-k thin film (HfO2, TiO2, Al2O3) Depo.
• Applications of R&D
• Dielectric thin films : Al2O3, HfO2, etc
• Nitride & metal thin films : TaN, etc