Furnace_DRY | 열처리 확산로
| 연구실/분야 | |||
|---|---|---|---|
| 모델명 | KHD-306 | ||
| 제조사 | KSM | ||
| 담당자 | 강해라 | ||
| 연락처 | 052-217-4167 / haera@unist.ac.kr | ||
| 예약 가능여부 | 가능 | ||
| 예약단위 | 8hr | 1일최대예약시간 | 8hr |
| 예약Open(~일 전) | 2주전 | 예약취소불가(~일 전) | 2hr |
| 장비위치 | 108동 B101호 (Bldg. 108, Room B101) | ||
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Description
Silicon dioxide (SiO2) is a main insulating material used in micro technology and the most common technique in a furnace. There are two methods of oxidation. (Dry and wet)
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Specifications
• Wafer size : 4 ~ 6 inch Si
• Wet oxidation chamber
- thickness uniformity : less than ± 3 % within wafer less than ± 3 % wafer to wafer
• Dry oxidation chamber
- thickness uniformity : less than ± 3 % within wafer less than ± 3 % wafer to wafer
• Metal & dielectric film annealing chamber
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Applications
• Oxidation layer growth on silicon wafer
• Metal & dielectric layer annealing process