PE CVD
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Description
PECVD System is a multipurpose tool capable of deposition silicon oxide, silicon nitride using electron energy (plasma) as the activation method to enable deposition at a low temperature and at a reasonable rate.
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Specifications
• Wafer Size : 4 ~ 6 inch silicon wafer
Max Substrate Temperature : 400 °C
• High Plasma Density, High Dep. rate PE-CVD
• Power Supply : 600 W, 13.56 MHz RF Generator
• Process guarantee : 1000 Å ~ 2 um
• Uniformity : less than ± 3 % within wafer
• Wafer to Wafer Uniformity : ± 3 %
• Uniform process gas flow distribution
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Applications
• Passivation layer of semiconductor
• Inter metal dielectric of semiconductor
• Inter layer dielectric of semiconductor