Dielectric RIE
-
Description
Reactive ion etcher forms fine patterns by dry etching placing wafer inside the process module and generating plasma.
-
Specifications
• SiO2 etch
- process gases : CF4, CHF3, Ar, O2
- etch rate : > 35 nm/min
- uniformity : ± 5 % (200 mm diameter)
- selectivity : SiO2 : resist = 3 ~ 5 : 1
• SiN etch
- process gases : CF4, Ar, O2
- etch rate : > 50 nm/min
- uniformity : ± 5 % (200 mm diameter)
- selectivity : 1.5 ~ 3 : 1
-
Applications
• Si / SiO2 / Si3N4 dry etching