보유장비

E-beam lithography

보유장비 관련 정보
연구실/분야
모델명 NB3
제조사 NBL
담당자
연락처 /
예약 가능여부 가능
예약안내 4hr 최대 예약시간 24hr
Open 2주전 Cancel 2hr
  • Description

    As the primary electron beam penetrates the resist, elastic collisions spread the beam slightly. Backscattered electrons from the substrate may be spread over several microns. The secondary electrons generated in this process impart energy to resist through inelastic collisions. This causes the physical and chemical changes in the resist that renders in more soluble than the unexposed resist.

  • Specifications

    • Theoretical beam size : 2.1 nm @100 keV, 7 nA

    • Line width : < 5 nm

    • Deflection : vector scan, 55 MHz

    • Address grid resolution : 1 nm, 1 mm main field

    • Beam voltage : 30 ~ 100 keV

    • Writing area : 195 mm × 195 mm

    • Repeatable : 20 nm over wafer

  • Applications

    • nm level device fabrication

    • Generating fine patterns

    • Mask manufacture

    • Optical device fabrication

    • Contacts for Nanowires/rods