Photolitho#1(MA6)
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Description
MA6 performs alignment and exposures by UV lamp on the wafer and substrates coated by Photo-resist through mask with alignment keys.
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Specifications
• High efficiency & high accurate UV exposure system
• UV lamp : Hg 350 W
• UV 400 : 350 ~ 450 nm (I-, H-, G-line)
• Gap adjustment accuracy : 1μm
• Methods : top & back side alignment
• Alignment accuracy : 1μm
• Exposure type : vacuum, low vac., proximity, hard, soft, flood-exposure mode
• Semi automatic system
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Applications
• Micro scale patterning for semiconductor process
• MEMS / Nano device fabrication