보유장비

NX2000 FIB | 집속이온빔 FIB

NX2000 FIB
보유장비 관련 정보
연구실/분야
모델명 NX2000
제조사 Hitachi
담당자 이선이
연락처 052-217-4023 / ssun295@unist.ac.kr
예약 가능여부 불가능
예약단위 1일최대예약시간
예약Open(~일 전) 예약취소불가(~일 전)
장비위치 Bldg.102, Room B115
  • Description

    FIB-SEM systems have become an indispensable tool for characterization and analysis of the latest technologies and high performance nano-scale materials. An ever-increasing demand for ultrathin TEM lamellas without artifacts during FIB processing require the best in ion and electron optics technologies.
    Hitachi's NX2000 high performance FIB and high resolution SEM system with its unique sample orientation control* and triple beam* technologies, supports high throughput, and high quality TEM sample preparation for cutting edge applications.

  • Specifications

    FIB column

    • Resolution : 4 nm @ 30 kV, 60 nm @ 2 kV

    • Acceleration voltage : 0.5 ~ 30 kV

    FE-SEM column

    • Resolution : 4 nm @ 30 kV, 60 nm @ 2 kV

    • Acceleration voltage : 0.5 ~ 30 kV

    • electron source : Cold cathode field emission source

  • Applications

    • Ultra high resolution electron, ion imaging

    • TEM sample preparation

    • High-quality lamella preparation with in-situ Ar ion milling