Equipment

Dielectric RIE | 건식 식각장치

보유장비 관련 정보
Laboratory/Field
Model Labstar
Maker TTL
Technician Kang O Kim
Contact 052-217-4182 / ko8809@unist.ac.kr
Status for Reservation 가능
Reservation Unit 1hr Maximum Time (per day) 1hr
Open(~ago) 2주전 Cancel (~ago) 2hr
  • Description

    Reactive ion etcher forms fine patterns by dry etching placing wafer inside the process module and generating plasma.

  • Specifications

    • SiO2 etch

    - process gases : CF4, CHF3, Ar, O2

    - etch rate : > 35 nm/min

    - uniformity : ± 5 % (200 mm diameter)

    - selectivity : SiO2 : resist = 3 ~ 5 : 1

    • SiN etch

    - process gases : CF4, Ar, O2

    - etch rate : > 50 nm/min

    - uniformity : ± 5 % (200 mm diameter)

    - selectivity : 1.5 ~ 3 : 1

  • Applications

    • Si / SiO2 / Si3N4 dry etching