보유장비

E-beam lithography | 전자선 노광장치 시스템

E-beam lithography
보유장비 관련 정보
연구실/분야
모델명 NB3
제조사 NBL
담당자 이루다
연락처 052-217-4022 / luda30159@unist.ac.kr
예약 가능여부 가능
예약단위 4hr 1일최대예약시간 24hr
예약Open(~일 전) 2주전 예약취소불가(~일 전) 2hr
  • Description

    As the primary electron beam penetrates the resist, elastic collisions spread the beam slightly. Backscattered electrons from the substrate may be spread over several microns. The secondary electrons generated in this process impart energy to resist through inelastic collisions. This causes the physical and chemical changes in the resist that renders in more soluble than the unexposed resist.

  • Specifications

    • Theoretical beam size : 2.1 nm @100 keV, 7 nA

    • Line width : < 5 nm

    • Deflection : vector scan, 55 MHz

    • Address grid resolution : 1 nm, 1 mm main field

    • Beam voltage : 30 ~ 100 keV

    • Writing area : 195 mm × 195 mm

    • Repeatable : 20 nm over wafer

  • Applications

    • nm level device fabrication

    • Generating fine patterns

    • Mask manufacture

    • Optical device fabrication

    • Contacts for Nanowires/rods